Band structure at heterojunction interfaces of GaInP solar cells
Identifieur interne : 000126 ( Russie/Analysis ); précédent : 000125; suivant : 000127Band structure at heterojunction interfaces of GaInP solar cells
Auteurs : RBID : Pascal:10-0514903Descripteurs français
- Pascal (Inist)
- Structure bande, Hétérojonction, Cellule solaire, Etude expérimentale, Admittance, Simulation numérique, Barrière potentiel, Bande valence, Discontinuité bande, Hauteur barrière, Couche double, Endommagement, Caractéristique courant tension, Composé ternaire, Phosphure de gallium, Phosphure d'indium, Phosphure d'aluminium, Composé quaternaire, Composé III-V, GaInP, AlGaInP.
English descriptors
- KwdEn :
- Admittance, Aluminium phosphide, Band offset, Band structure, Barrier height, Damaging, Double layers, Experimental study, Gallium phosphide, Heterojunction, III-V compound, Indium phosphide, Numerical simulation, Potential barrier, Quaternary compound, Solar cell, Ternary compound, Valence band, Voltage current curve.
Abstract
Experimental study of the band structure at the heterojunction interfaces of GalnP solar cells was performed by admittance spectroscopy. Admittance measurements were analyzed using numerical simulations. A good agreement between simulation and experiment was obtained. A potential barrier of about 0.6 eV at the p-GaAs/p-AlInP interface formed due to the high valence band offset was observed by the experiment. This high barrier creates fundamental limitation for the usage of this interface in p-n GaInP solar cells. A way to reduce the effective barrier height to 0.25 ± 0.02 eV using a double layer p-AlGaAs/p-AlGaInP window avoiding deterioration of I-V curves was demonstrated.
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Pascal:10-0514903Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Band structure at heterojunction interfaces of GaInP solar cells</title><author><name sortKey="Gudovskikh, A S" uniqKey="Gudovskikh A">A. S. Gudovskikh</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Saint-Petersburg Physics and Technology Centre for Research and Education of the Russian Academy of Sciences, Hlopina Street 8/3</s1><s2>194021 St. Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Kleider, J P" uniqKey="Kleider J">J. P. Kleider</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>LGEP, CNRS UMR 8507, SUPELEC, Univ Paris-Sud, UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon</s1><s2>91192 Gif-sur-Yvette</s2><s3>FRA</s3><sZ>2 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Gif-sur-Yvette</settlement></placeName></affiliation></author><author><name sortKey="Kalyuzhnyy, N A" uniqKey="Kalyuzhnyy N">N. A. Kalyuzhnyy</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F. Ioffe Physical-technical Institute, Polytechnicheskaya Street 26</s1><s2>194021 St.-Petersburg</s2><s3>RUS</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>194021 St.-Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Lantratov, V M" uniqKey="Lantratov V">V. M. Lantratov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F. Ioffe Physical-technical Institute, Polytechnicheskaya Street 26</s1><s2>194021 St.-Petersburg</s2><s3>RUS</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>194021 St.-Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Mintairov, S A" uniqKey="Mintairov S">S. A. Mintairov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F. Ioffe Physical-technical Institute, Polytechnicheskaya Street 26</s1><s2>194021 St.-Petersburg</s2><s3>RUS</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>194021 St.-Petersburg</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0514903</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0514903 INIST</idno><idno type="RBID">Pascal:10-0514903</idno><idno type="wicri:Area/Main/Corpus">003999</idno><idno type="wicri:Area/Main/Repository">004658</idno><idno type="wicri:Area/Russie/Extraction">000126</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Admittance</term><term>Aluminium phosphide</term><term>Band offset</term><term>Band structure</term><term>Barrier height</term><term>Damaging</term><term>Double layers</term><term>Experimental study</term><term>Gallium phosphide</term><term>Heterojunction</term><term>III-V compound</term><term>Indium phosphide</term><term>Numerical simulation</term><term>Potential barrier</term><term>Quaternary compound</term><term>Solar cell</term><term>Ternary compound</term><term>Valence band</term><term>Voltage current curve</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Structure bande</term><term>Hétérojonction</term><term>Cellule solaire</term><term>Etude expérimentale</term><term>Admittance</term><term>Simulation numérique</term><term>Barrière potentiel</term><term>Bande valence</term><term>Discontinuité bande</term><term>Hauteur barrière</term><term>Couche double</term><term>Endommagement</term><term>Caractéristique courant tension</term><term>Composé ternaire</term><term>Phosphure de gallium</term><term>Phosphure d'indium</term><term>Phosphure d'aluminium</term><term>Composé quaternaire</term><term>Composé III-V</term><term>GaInP</term><term>AlGaInP</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Experimental study of the band structure at the heterojunction interfaces of GalnP solar cells was performed by admittance spectroscopy. Admittance measurements were analyzed using numerical simulations. A good agreement between simulation and experiment was obtained. A potential barrier of about 0.6 eV at the p-GaAs/p-AlInP interface formed due to the high valence band offset was observed by the experiment. This high barrier creates fundamental limitation for the usage of this interface in p-n GaInP solar cells. A way to reduce the effective barrier height to 0.25 ± 0.02 eV using a double layer p-AlGaAs/p-AlGaInP window avoiding deterioration of I-V curves was demonstrated.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>94</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Band structure at heterojunction interfaces of GaInP solar cells</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Inorganic and Nanostructured Photovoltaics (EMRS B)</s1></fA09><fA11 i1="01" i2="1"><s1>GUDOVSKIKH (A. S.)</s1></fA11><fA11 i1="02" i2="1"><s1>KLEIDER (J. P.)</s1></fA11><fA11 i1="03" i2="1"><s1>KALYUZHNYY (N. A.)</s1></fA11><fA11 i1="04" i2="1"><s1>LANTRATOV (V. M.)</s1></fA11><fA11 i1="05" i2="1"><s1>MINTAIROV (S. A.)</s1></fA11><fA12 i1="01" i2="1"><s1>CONIBEER (Gavin)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SCHROPP (Ruud E. I.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>MELLIKOV (Enn)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>TOPIC (Marko)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>BEAUCARNE (Guy)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Saint-Petersburg Physics and Technology Centre for Research and Education of the Russian Academy of Sciences, Hlopina Street 8/3</s1><s2>194021 St. Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>LGEP, CNRS UMR 8507, SUPELEC, Univ Paris-Sud, UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon</s1><s2>91192 Gif-sur-Yvette</s2><s3>FRA</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>A.F. Ioffe Physical-technical Institute, Polytechnicheskaya Street 26</s1><s2>194021 St.-Petersburg</s2><s3>RUS</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA15 i1="01"><s1>ARC Photovoltaics Centre of Excellence, University of New South Wales</s1><s2>Sydney 2052</s2><s3>AUS</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics, P.O. Box 80000</s1><s2>3508 TA Utrecht</s2><s3>NLD</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1><s2>Tallinn 19086</s2><s3>EST</s3><sZ>3 aut.</sZ></fA15><fA15 i1="04"><s1>IMEC, Kapeldreef 75</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>5 aut.</sZ></fA15><fA20><s1>1953-1958</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000191328110220</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>18 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0514903</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Experimental study of the band structure at the heterojunction interfaces of GalnP solar cells was performed by admittance spectroscopy. Admittance measurements were analyzed using numerical simulations. A good agreement between simulation and experiment was obtained. A potential barrier of about 0.6 eV at the p-GaAs/p-AlInP interface formed due to the high valence band offset was observed by the experiment. This high barrier creates fundamental limitation for the usage of this interface in p-n GaInP solar cells. A way to reduce the effective barrier height to 0.25 ± 0.02 eV using a double layer p-AlGaAs/p-AlGaInP window avoiding deterioration of I-V curves was demonstrated.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Structure bande</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Band structure</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Estructura banda</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Hétérojonction</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Heterojunction</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Heterounión</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Solar cell</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Célula solar</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Etude expérimentale</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Experimental study</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Estudio experimental</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Admittance</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Admittance</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Admitancia</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Simulation numérique</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Numerical simulation</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Simulación numérica</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Barrière potentiel</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Potential barrier</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Barrera potencial</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Bande valence</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Valence band</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Banda valencia</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Discontinuité bande</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Band offset</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Discontinuidad banda</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Hauteur barrière</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Barrier height</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Altura barrera</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Couche double</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Double layers</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Endommagement</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Damaging</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Deterioración</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Caractéristique courant tension</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Voltage current curve</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Característica corriente tensión</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Composé ternaire</s0><s5>22</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Ternary compound</s0><s5>22</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Compuesto ternario</s0><s5>22</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Phosphure de gallium</s0><s5>23</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Gallium phosphide</s0><s5>23</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Galio fosfuro</s0><s5>23</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>24</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>24</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>24</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Phosphure d'aluminium</s0><s5>25</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Aluminium phosphide</s0><s5>25</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Aluminio fosfuro</s0><s5>25</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Composé quaternaire</s0><s5>26</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Quaternary compound</s0><s5>26</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Compuesto cuaternario</s0><s5>26</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Composé III-V</s0><s5>27</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>III-V compound</s0><s5>27</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>27</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>GaInP</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>AlGaInP</s0><s4>INC</s4><s5>83</s5></fC03><fN21><s1>347</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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